Key Features
- DRAM Cache embedded
- Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
- PCIe Gen 3 x4 interface
- Compliant with PCI Express specification 3.1
- Compliant with NVM Express specification 1.3
- Supports NVM command
- SLC caching technology
- Built-in LDPC ECC (Error Correction Code) functionality
- Dynamic thermal throttling
- Compliant with RoHS 2.0 standards
- Supports Transcend SSD Scope Pro software
128GB, M.2 2280, PCIE GEN3X4, M-KEY, 3D - SUPPORTS NVM COMMAND - SLC CACHING TEC
TS128GMTE652T
SKU 5652524
UPC 760557845515
Contact us to check availability
Product Overview
128GB, M.2 2280, PCIE GEN3X4, M-KEY, 3D - SUPPORTS NVM COMMAND - SLC CACHING TEC
- Transcend (TS128GMTE652T) Hard Drives/Solid State Drives
- Transcend MTE MTE652T 128 GB Solid State Drive - M.2 2280 Internal - PCI Express NVMe (PCI Express NVMe 3.0 x4) - 2 DWPD - 3 Year Warranty
- Transcend MTE MTE652T 128 GB Solid State Drive - M.2 2280 Internal - PCI Express NVMe (PCI Express NVMe 3.0 x4)
- 2 DWPD - 3 Year Warranty
Technical Specifications
| Product Type | Solid State Drive |
| Storage Capacity | 128 GB |
| Manufacturer Part Number | TS128GMTE652T |
| Limited Warranty | 3 Year |
| Weight (Approximate) | 0.32 oz |
| Drive Type | Internal |
| Form Factor | M.2 2280 |
| Manufacturer | Transcend Information, Inc |
| Product Model | MTE652T |
| Product Name | MTE652T Solid State Drive |
| Product Series | MTE |
| Brand Name | Transcend |
| Height | 0.1" |
| Width | 0.9" |
| Depth | 3.1" |
| Environmentally Friendly | Yes |
| Wireless LAN | No |
| Drive Interface | PCI Express NVMe |
| Drive Interface Standard | PCI Express NVMe 3.0 x4 |
| Endurance (DWPD) | 2 |
| Environmental Compliance | Restriction of Hazardous Substances (RoHS) 2 |
Marketing Information
MTE652T
Transcend's MTE652T M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE652T features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency. The MTE652T is built with DRAM cache for fast access, and is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles.
Shipping & Dimensions
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