Key Features
- No matter how heavy and numerous the applications that you are using, 1600 MHz memory speed with unbuffered signal will run them smoothly
- 4 GB of memory to refine your computer's performance
- 204-pin-pin DDR3 SDRAM interface multiplexes 2-bit data from memory cell and I/O buses to minimize processor idle time and enhance your computer's performance
- Enables efficient and smooth execution of all your heavy-duty applications with maximum productivity
- Unbuffered signal processing provides reliable optimization for your required applications to allow maximum usability
- 1 x 4GB modules for dependable storage efficiency and maximum convenience
- CL11 CAS latency for reliable, fast response and improved performance
- 204-pin for faster, dependable performance and better access to data and information
- SODIMM form factor with 204-pin and 4 GB memory size effectively lessens the electrical load on the memory controller to allow maximum feasibility
TRANSCEND 4GB-RAM / TECHNOLOGY: DDR3-RAM / MEMORY SPEED: 1600 -RAM FORM FACTOR:
TS512MSK64V6N
SKU 3487889
UPC 760557821304
Contact us to check availability
Product Overview
TRANSCEND 4GB-RAM / TECHNOLOGY: DDR3-RAM / MEMORY SPEED: 1600 -RAM FORM FACTOR:
- 4GB DDR3 1600 SO-DIMM CL11 2Rx8
- Transcend 4GB DDR3 1600 SO-DIMM CL11 2Rx8 - 4 GB (1 x 4GB) DDR3 SDRAM - 1600 MHz - CL11 - 1.50 V - Non-ECC - Unbuffered - 204-pin - SODIMM
- Transcend 4GB DDR3 1600 SO-DIMM CL11 2Rx8
- 4 GB (1 x 4GB) DDR3 SDRAM - 1600 MHz - CL11 - 1.50 V - Non-ECC - Unbuffered - 204-pin - SODIMM
Technical Specifications
| Product Type | RAM Module |
| CAS Latency | CL11 |
| Error Checking | Non-ECC |
| Manufacturer Part Number | TS512MSK64V6N |
| Number of Modules | 1 x 4GB |
| Number of Pins | 204-pin |
| Signal Processing | Unbuffered |
| Thickness | 39.4 mil |
| Form Factor | SODIMM |
| Length | 2.7" |
| Manufacturer | Transcend Information, Inc |
| Memory Speed | 1600 MHz |
| Product Name | 4GB DDR3 1600 SO-DIMM CL11 2Rx8 |
| Memory Size | 4 GB |
| Brand Name | Transcend |
| Memory Technology | DDR3 SDRAM |
| Country of Origin | Taiwan |
| Width | 1.2" |
| Memory Voltage | 1.50 V |
Marketing Information
The TS512MSK64V6N is a 512M x 64bits DDR3-1600 2Rank SO-DIMM. The TS512MSK64V6N consists of 16pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64V6N is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.
Shipping & Dimensions
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